Kato Mikio | Toshiba Nanoanalysis Corporation, Yokohama 212-8583, Japan

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概要

• Kato Mikioの詳細を見る
• 同名の論文著者
• Toshiba Nanoanalysis Corporation, Yokohama 212-8583, Japanの論文著者

関連著者

• Toyama Takeshi

  The Oarai Center Institute For Materials Research Tohoku University

• Nagai Yasuyoshi

  The Oarai Center Institute For Materials Research Tohoku University

• UCHIDA Hiroshi

  Toshiba Nanoanalysis Corporation

• Takamizawa Hisashi

  The Oarai Center Institute For Materials Research Tohoku University

• Miyagi Takahiro

  Toray Research Center Inc.

• Kitamoto Katsuyuki

  Toray Research Center Inc.

• Shimizu Yasuo

  The Oarai Center Institute For Materials Research Tohoku University

• Kato Jun

  Toray Research Center Inc.

• Kato Mikio

  Toshiba Nanoanalysis Corporation, Yokohama 212-8583, Japan

• Yano Fumiko

  The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

• Okada Noriyuki

  Toshiba Nanoanalysis Corporation, Yokohama 212-8583, Japan

• Inoue Koji

  The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan

• Nishida Akio

  Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan

• Mogami Tohru

  NEC Corporation, Tsukuba, Ibaraki 305-8501, Japan

• Akahori Seishi

  Toray Research Center, Inc., Otsu 520-8567, Japan

• INOUE Koji

  The Oarai Center, Institute for Materials Research, Tohoku University

• MOGAMI Tohru

  NEC Corporation

• NISHIDA Akio

  Renesas Electronics Corporation

• AKAHORI Seishi

  Toray Research Center, Inc.

• KATO Mikio

  Toshiba Nanoanalysis Corporation

• YANO Fumiko

  The Oarai Center, Institute for Materials Research, Tohoku University

• OKADA Noriyuki

  Toshiba Nanoanalysis Corporation

• NAGAI Yasuyoshi

  The Oarai Center, Institute for Materials Research, Tohoku University

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著作論文

• Three-Dimensional Dopant Characterization of Actual Metal--Oxide--Semiconductor Devices of 65 nm Node by Atom Probe Tomography
• Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65 nm Node by Atom Probe Tomography
• Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65nm Node by Atom Probe Tomography

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