Akahori Seishi | Toray Research Center, Inc., Otsu 520-8567, Japan
スポンサーリンク
概要
関連著者
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Akahori Seishi
Toray Research Center, Inc., Otsu 520-8567, Japan
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Toyama Takeshi
The Oarai Center Institute For Materials Research Tohoku University
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Nagai Yasuyoshi
The Oarai Center Institute For Materials Research Tohoku University
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UCHIDA Hiroshi
Toshiba Nanoanalysis Corporation
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Takamizawa Hisashi
The Oarai Center Institute For Materials Research Tohoku University
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Miyagi Takahiro
Toray Research Center Inc.
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Kitamoto Katsuyuki
Toray Research Center Inc.
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Shimizu Yasuo
The Oarai Center Institute For Materials Research Tohoku University
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Kato Jun
Toray Research Center Inc.
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Inoue Koji
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
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Nishida Akio
Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan
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Kato Mikio
Toshiba Nanoanalysis Corporation, Yokohama 212-8583, Japan
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Yano Fumiko
The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan
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Mogami Tohru
NEC Corporation, Tsukuba, Ibaraki 305-8501, Japan
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Okada Noriyuki
Toshiba Nanoanalysis Corporation, Yokohama 212-8583, Japan
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UENO Kazuyoshi
Shibaura Institute of Technology, Dept. of Electronic Engineering
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Hashimoto Hideki
Toray Research Center Inc.
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Razak Liyana
Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan
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Yamaguchi Takamasa
Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan
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INOUE Koji
The Oarai Center, Institute for Materials Research, Tohoku University
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MOGAMI Tohru
NEC Corporation
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NISHIDA Akio
Renesas Electronics Corporation
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AKAHORI Seishi
Toray Research Center, Inc.
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KATO Mikio
Toshiba Nanoanalysis Corporation
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YANO Fumiko
The Oarai Center, Institute for Materials Research, Tohoku University
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OKADA Noriyuki
Toshiba Nanoanalysis Corporation
著作論文
- Current Induced Grain Growth of Electroplated Copper Film (Special Issue : Advanced Metallization for ULSI Applications)
- Three-Dimensional Dopant Characterization of Actual Metal--Oxide--Semiconductor Devices of 65 nm Node by Atom Probe Tomography
- Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65 nm Node by Atom Probe Tomography