Current Induced Grain Growth of Electroplated Copper Film (Special Issue : Advanced Metallization for ULSI Applications)
スポンサーリンク
概要
著者
-
UENO Kazuyoshi
Shibaura Institute of Technology, Dept. of Electronic Engineering
-
Hashimoto Hideki
Toray Research Center Inc.
-
Akahori Seishi
Toray Research Center, Inc., Otsu 520-8567, Japan
-
Razak Liyana
Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan
-
Yamaguchi Takamasa
Shibaura Institute of Technology, Koto, Tokyo 135-8548, Japan
関連論文
- Characterization of HfO_2 Films Prepared on Various Surfaces for Gate Dielectrics(High-κ Gate Dielectrics)
- Characterization of HfO_2 Films Prepared on Various Surfaces for Gate Dielectrics
- Thermal Stability of the Yttrium Aluminate Film and the Suppression of its structural change and electrical properties degradation
- Chemical vapor deposition of nanocarbon on electroless NiB catalyst using ethanol precursor (Special issue: Advanced metallization for ULSI applications)
- Grain Growth Enhancement of Electroplated Copper Film by Supercritical Annealing
- Key mechanisms for improved EM lifetime of CoWP capped Cu interconnects
- In Situ Observation of Native Oxide Growth on a Si(100) Surface Using Grazing Incidence X-Ray Reflectivity and Fourier Transform Infrared Spectrometer : Semiconductors
- Current Induced Grain Growth of Electroplated Copper Film (Special Issue : Advanced Metallization for ULSI Applications)
- Three-Dimensional Elemental Analysis of Commercial 45nm Node Device with High-k/Metal Gate Stack by Atom Probe Tomography
- Barrier Integrity of Electroless Diffusion Barriers and Organosilane Monolayer against Copper Diffusion under Bias Temperature Stress
- Structural Changes of Y2O3 and La2O3 Films by Heat Treatment
- Twenty-Five Millisecond Resolution Time-Resolved X-Ray Absorption Spectroscopy in Dispersive Mode
- Structural Studies of High-Performance Low-$k$ Dielectric Materials Improved by Electron-Beam Curing
- Three-Dimensional Dopant Characterization of Actual Metal--Oxide--Semiconductor Devices of 65 nm Node by Atom Probe Tomography
- Low-Resistance Metal Contacts for Nanocarbon/Cobalt Interconnects
- Heat-Resistant Co--W Catalytic Metals for Multilayer Graphene Chemical Vapor Deposition
- Low-Resistance Metal Contacts for Nanocarbon/Cobalt Interconnects (Special Issue : Advanced Metallization for ULSI Applications)
- Three-Dimensional Dopant Characterization of Actual Metal-Oxide-Semiconductor Devices of 65 nm Node by Atom Probe Tomography