In Situ Observation of Native Oxide Growth on a Si(100) Surface Using Grazing Incidence X-Ray Reflectivity and Fourier Transform Infrared Spectrometer : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-09-15
著者
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Nagai N
Engineering Research Laboratory Hitachi Maxell Ltd.
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Uemura Satoshi
Sanki Engineering Co. Ltd.
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HASHIMOTO Hideki
Toray Research Center, Inc.
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NAGAI Naoto
Toray Research Center Inc.
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FUJII Masanori
Sanki Engineering Co., Ltd.
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Uemura S
Sanki Engineering Co. Ltd. Kanagawa Jpn
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Fujii Masanori
Sanki Engineering Co. Ltd.
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Hashimoto Hideki
Toray Research Center Inc.
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NAGAI Nobuyuki
Toray Research Center, Inc.
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- In Situ Observation of Native Oxide Growth on a Si(100) Surface Using Grazing Incidence X-Ray Reflectivity and Fourier Transform Infrared Spectrometer : Semiconductors
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