Characterization of Crystalline Defects and Stress in Shallow Trench Isolation by Cathodoluminescence and Raman Spectroscopies
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Matsuda Keiko
Toray Res. Center Inc. Shiga Jpn
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Matsuda Keiko
Toray Research Center Inc.
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Yoshikawa Masanobu
Toray Research Center Inc.
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SUGIE Ryuichi
Toray Research Center Inc.
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NAGAI Naoto
Toray Research Center Inc.
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AJIOKA Tsuneo
Toray Research Center Inc.
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MIZUKOSHI Toshikazu
Miyagi Oki Electric Co., Ltd.
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SHIBUSAWA Katsuhiko
Miyagi Oki Electric Co., Ltd.
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YO Shoji
Oki Electric Industry Co., Ltd.
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Yo Shoji
Oki Electric Industry Co. Ltd.
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Shibusawa Katsuhiko
Miyagi Oki Electric Co. Ltd.
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Mizukoshi Toshikazu
Miyagi Oki Electric Co. Ltd.
関連論文
- Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering
- Characterization of Crystalline Defects and Stress in Shallow Trench Isolation by Cathodoluminescence and Raman Spectroscopies
- Depth Profile Analysis of Plasma-cured Multi Layer Resist
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