SUGIE Ryuichi | Toray Research Center Inc.
スポンサーリンク
概要
関連著者
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Yoshikawa Masanobu
Toray Research Center Inc.
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SUGIE Ryuichi
Toray Research Center Inc.
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Matsuda Keiko
Toray Res. Center Inc. Shiga Jpn
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Matsuda Keiko
Toray Research Center Inc.
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Murakami Masataka
Toray Research Center Inc.
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ISHIDA Hideyuki
Toray Research Center Inc.
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SHIMIZU Ryosuke
PHOTON Design Corporation
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NAGAI Naoto
Toray Research Center Inc.
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AJIOKA Tsuneo
Toray Research Center Inc.
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MIZUKOSHI Toshikazu
Miyagi Oki Electric Co., Ltd.
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SHIBUSAWA Katsuhiko
Miyagi Oki Electric Co., Ltd.
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YO Shoji
Oki Electric Industry Co., Ltd.
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Yo Shoji
Oki Electric Industry Co. Ltd.
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Shibusawa Katsuhiko
Miyagi Oki Electric Co. Ltd.
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Mizukoshi Toshikazu
Miyagi Oki Electric Co. Ltd.
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Ryohei Satoh
Center for Advanced Science and Innovation, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Takeshi Mitani
Toray Research Center Inc., 3-3-7 Sonoyama, Otsu 520-8567, Japan
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Yoshiharu Iwata
Center for Advanced Science and Innovation, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Mitani Takeshi
Toray Research Center Inc., 3-3-7 Sonoyama, Otsu 520-8567, Japan
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Masanobu Yoshikawa
Toray Research Center Inc., 3-3-7 Sonoyama, Otsu 520-8567, Japan
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Shimizu Ryosuke
PHOTON Design Corporation, 2-24-6 Kamiya, Kita-ku, Tokyo 115-0043, Japan
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Yoshikawa Masanobu
Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan
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Ishida Hideyuki
Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan
著作論文
- Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering
- Characterization of Crystalline Defects and Stress in Shallow Trench Isolation by Cathodoluminescence and Raman Spectroscopies
- Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors
- Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering