Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering

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We have developed a new tapping mode-scanning near-field optical Raman microscope (SNORM) with a caved and pyramidical probe, using resonant Raman scattering and measured the stress distribution of very-large-scale integration (VLSI) standards made of the silicon dioxide film and Si. It has been found that compressive stresses of about 0.69 GPa/cm2 are concentrated on the corner of the area uncovered by silicon dioxide. The SNORM we developed has at least the spatial resolution of less than 250 nm and is a useful tool to measure image of stresses in Si devices within a short time and with a penetration depth of 5 nm.
2006-05-25