Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors

概要

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Cross-sectional cathodoluminescence (CL) measurements were applied to the study of electron-irradiated punch-through insulated gate bipolar transistors (IGBTs) to investigate the relationship between radiative recombination centers and electrical characteristics. IGBTs were additionally annealed at temperatures of 200–400 °C for 1 h. As annealing temperature rose, collector–emitter saturation voltage ($V_{\text{CES}}$) decreased and current fall time ($t_{\text{f}}$) increased. The cross-sectional CL measurements showed sharp luminescent peaks at 1018 meV ($W$ or $I$1), 1040 meV ($X$ or $I$3), and 790 meV ($C$) and a broad band at approximately 0.90–1.05 eV. As annealing temperature rose, the intensity of the $W$ line decreased and that of the $X$ line increased, suggesting that small self-interstitial clusters agglomerate and form stable, large self-interstitial clusters reducing the total number of self-interstitial clusters. The $C$ line, which originated from an interstitial oxygen and carbon complex, showed no significant change. We consider that self-interstitial clusters play important roles in the electrical characteristics of lifetime-controlled IGBTs.
2010-04-25