Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2006-05-25

著者

• Matsuda Keiko

  Toray Res. Center Inc. Shiga Jpn

• Matsuda Keiko

  Toray Research Center Inc.

• Yoshikawa Masanobu

  Toray Research Center Inc.

• Murakami Masataka

  Toray Research Center Inc.

• SUGIE Ryuichi

  Toray Research Center Inc.

• ISHIDA Hideyuki

  Toray Research Center Inc.

• SHIMIZU Ryosuke

  PHOTON Design Corporation

関連論文

• Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering
• Characterization of Crystalline Defects and Stress in Shallow Trench Isolation by Cathodoluminescence and Raman Spectroscopies
• Depth Profile Analysis of Plasma-cured Multi Layer Resist
• Cathodoluminescence Microcharacterization of Radiative Recombination Centers in Lifetime-Controlled Insulated Gate Bipolar Transistors
• Stress Characterization of Si by a Scanning Near-Field Optical Raman Microscope with Spatial Resolution and with Penetration Depth at the Nanometer Level, using Resonant Raman Scattering
• Microscopic Degradation Mechanisms in Silicon Photovoltaic Module under Long-Term Environmental Exposure
• Study of Peeling at Doped NiSi/SiO2 Interface
• Surface-Enhanced Raman Scattering from Surface Layers of Gas-Evaporated Silver Small Particles

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