Measurements and Simulation of Sensitivity of Differential-Pair Transistors against Substrate Voltage Variation

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概要

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• The response of differential pairs against low-frequency substrate voltage variation is captured in a combined transistor and substrate network models. The model generation is regularized for variation of transistor geometries including channel sizes, fingering and folding, and the placements of guard bands. The expansion of the models for full-chip substrate noise analysis is also discussed. The substrate sensitivity of differential pairs is evaluated through on-chip substrate coupling measurements in a 90nm CMOS technology with more than 64 different geometries and operating conditions. The trends and strengths of substrate sensitivity are shown to be well consistent between simulation and measurements.

著者

• KUMASHIRO Shigetaka

  MIRAI-Selete

• Nagata Makoto

  Graduate School Of System Informatics Kobe University

• MOGAMI Tohru

  MIRAI-Selete

• Yamada Toshio

  Mirai-selete

• Souda Masaaki

  Mirai-selete

• BANDO Yoji

  Graduate School of System Informatics, Kobe University

• OHKAWA Toru

  MIRAI-Selete

• TAKARAMOTO Toshiharu

  MIRAI-Selete

• Bando Yoji

  Graduate School Of System Informatics Kobe University

• Takaya Satoshi

  Graduate School Of System Informatics Kobe University

• Mogami Tohru

  MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan

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