Exhaustive and Systematic Accuracy Verification and Enhancement of STI Stress Compact Model for General Realistic Layout Patterns
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概要
- 論文の詳細を見る
- 2010-08-01
著者
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KUMASHIRO Shigetaka
MIRAI-Selete
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Yoshimura Hisao
Mirai-selete
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Yamada Kenta
Mirai-selete
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SYO Toshiyuki
MIRAI-Selete
-
ITO Masaru
MIRAI-Selete
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KUNIKIYO Tatsuya
MIRAI-Selete
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KANAMOTO Toshiki
MIRAI-Selete
関連論文
- Layout-Aware Compact Model of MOSFET Characteristics Variations Induced by STI Stress
- Exhaustive and Systematic Accuracy Verification and Enhancement of STI Stress Compact Model for General Realistic Layout Patterns
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- On-Chip Single Tone Pseudo-Noise Generator for Analog IP Noise Tolerance Measurement
- On-Chip In-Place Measurements of V_ and Signal/Substrate Response of Differential Pair Transistors
- Measurements and Simulation of Sensitivity of Differential-Pair Transistors against Substrate Voltage Variation