False Operation of Static Random Access Memory Cells under Alternating Current Power Supply Voltage Variation
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概要
- 論文の詳細を見る
Static random access memory (SRAM) cores exhibit susceptibility against power supply voltage variation. False operation is investigated among SRAM cells under sinusoidal voltage variation on power lines introduced by direct RF power injection. A standard SRAM core of 16 kbyte in a 90 nm 1.5 V technology is diagnosed with built-in self test and on-die noise monitor techniques. The sensitivity of bit error rate is shown to be high against the frequency of injected voltage variation, while it is not greatly influenced by the difference in frequency and phase against SRAM clocking. It is also observed that the distribution of false bits is substantially random in a cell array.
- 2013-04-25
著者
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Nii Koji
Renesas Electronics Corporation
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Nagata Makoto
Graduate School Of System Informatics Kobe University
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Takata Hidehiro
Renesas Electronics Corporation
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Sawada Takuya
Graduate School of System Informatics, Kobe University, Kobe 657-8501, Japan
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- FOREWORD
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