Possible Origins of Extra Threshold Voltage Variability in N-Type Field-Effect Transistors by Intentionally Changing Process Conditions and Using Takeuchi Plot

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概要

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• The origins of the threshold voltage ($V_{\text{T}}$) variability of n-type field-effect transistors (NFETs), which have larger $V_{\text{T}}$ variability than p-type field-effect transistors (PFETs), are investigated using the Takeuchi plot and by intentionally changing process conditions. The process conditions investigated in this study are the polarity of polycrystalline silicon (poly-Si) gate electrodes, fluctuations of gate oxide thickness and gate oxide/substrate interface, and channel stress. It is confirmed by experiments that these process conditions negligibly affect $V_{\text{T}}$ variability in NFETs. This result does not contradict our previous result that channel profile nonuniformity is the major origin of the larger $V_{\text{T}}$ variability in NFETs than that in PFETs.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2010-07-25

著者

• Hiramoto Toshiro

  Robust Transistor Program Nano Silicon Integration Project Research Department 4 Mirai-selete

• Nishida Akio

  Robust Transistor Program Nano Silicon Integration Project Research Department 4 Mirai-selete

• Tsunomura Takaaki

  Robust Transistor Program Nano Silicon Integration Project Research Department 4 Mirai-selete

• Nishida Akio

  Robust Transistor Program, NSI Project, Research Department 4, MIRAI-Selete, Tsukuba, Ibaraki 305-8569, Japan

• Hiramoto Toshiro

  Robust Transistor Program, NSI Project, Research Department 4, MIRAI-Selete, Tsukuba, Ibaraki 305-8569, Japan

• Yano Fumiko

  Robust Transistor Program, NSI Project, Research Department 4, MIRAI-Selete, Tsukuba, Ibaraki 305-8569, Japan

• Tsunomura Takaaki

  Robust Transistor Program, NSI Project, Research Department 4, MIRAI-Selete, Tsukuba, Ibaraki 305-8569, Japan

関連論文

• Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
• High-Temperature Properties of Drain Current Variability in Scaled Field-Effect Transistors Analyzed by Decomposition Method
• Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
• Three-Dimensional Structure Analysis of Metal-Oxide-Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
• Investigation of Threshold Voltage Variability at High Temperature Using Takeuchi Plot
• Verification of Threshold Voltage Variation of Scaled Transistors with Ultralarge-Scale Device Matrix Array Test Element Group
• Possible Origins of Extra Threshold Voltage Variability in N-Type Field-Effect Transistors by Intentionally Changing Process Conditions and Using Takeuchi Plot

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