Power Spectrum of Smoothed Line-Edge and Line-Width Roughness

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概要

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• Line-edge and line-width roughness (LER and LWR) is a challenge for device variability control, especially in future devices. Actual device patterns have LER/LWR that is smoothed from the original photoresist patterns used as etching masks. In this study, the LER/LWR of these actual patterns was assumed to have a modified exponential autocorrelation function, which was smoothed by another exponential function. An analytical formula of the discrete power spectral density (PSD) of this LER/LWR was derived on the basis of the previous formula for non-smoothed LER/LWR, for use in a PSD fitting method. The PSDs calculated using this formula excellently fit the experimental PSDs of both types of polycrystalline-silicon lines without and with sidewall spacers. Through these fittings, it was found that the actual LER/LWR is accurately characterized using the variance and correlation length of the original non-smoothed LER/LWR simply by introducing a third parameter that characterizes the smoothing effect.

• 2011-08-25

著者

• Hiraiwa Atsushi

  MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan

• Nishida Akio

  MIRAI--Selete, Tsukuba, Ibaraki 305-8569, Japan

• Nishida Akio

  MIRAI, Semiconductor Leading Edge Technologies (Selete), Inc., 16-1 Onogawa, Tsukuba, Ibaraki 305-8569, Japan

関連論文

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• Channel Dopant Distribution in Metal--Oxide--Semiconductor Field-Effect Transistors Analyzed by Laser-Assisted Atom Probe Tomography
• Power Spectrum of Smoothed Line-Edge and Line-Width Roughness
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