Consideration of random dopant fluctuation models for accurate prediction of threshold voltage variation of metal-oxide-semiconductor field-effect transistors in 45nm technology and beyond

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文

著者

• Kamohara Shiro

  Mirai-selete

• NISHIDA Akio

  MIRAI-Selete

関連論文

• Random Threshold Voltage Variability Induced by Gate-Edge Fluctuations in Nanoscale Metal-Oxide-Semiconductor Field-Effect Transistors
• Consideration of random dopant fluctuation models for accurate prediction of threshold voltage variation of metal-oxide-semiconductor field-effect transistors in 45nm technology and beyond
• Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method
• Three-Dimensional Structure Analysis of Metal-Oxide-Insulator Field Effect Transistors with Different Electrical Properties by Scanning Transmission Electron Microscopy
• Impact of Oxide Thickness Fluctuation and Local Gate Depletion on Threshold Voltage Variation in Metal–Oxide–Semiconductor Field-Effect Transistors
• Consideration of Random Dopant Fluctuation Models for Accurate Prediction of Threshold Voltage Variation of Metal–Oxide–Semiconductor Field-Effect Transistors in 45 nm Technology and Beyond

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