Influeruce of Dislocations on the Threshold Current Density of AlGaAs/GaAs/InGaAs Strained Quarntum-Well Lasers
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概要
- 論文の詳細を見る
The influence of dislocations on the threshold current density of AlGaAs/GaAs/InGaAs strained quantum-well lasers has been investigated. The experimental results agree well with the calculated tendency where the dislocations are assumed to act as recombination centers. It is revealed that the threshold current density does not significantly increase when the dislocation density is lower than middle of 10^6/cm^2.
- 社団法人応用物理学会の論文
- 1994-12-15
著者
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ITO Hiroshi
NTT LSI Laboratories
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Harris Jr.james
Solid State Electronics Laboratory Stanford University
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Jr. Jr.
Solid State Electronics Laboratory, Stanford University, Stanford, CA 94025, U.S.A.
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