Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates
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概要
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We propose lattice-mismatched InGaAs double heterojunction bipolar transistors (HBTs) fabricated on a GaAs substrate as a new structure for simultaneously reducing power dissipation and improving the electron transport properties. Increasing the In composition in the base and collector layers is effective for reducing the turn-on voltage but causes an increase in the generation current in the collector depletion region and a softening of the breakdown characteristics in the base-collector junction. By optimizing the layer structure for HBTs, the current gain reaches 20 with a base doping of 1×10^<19>/cm^3 in spite of the existence of a relatively high dislocation density. The turn-on voltage for an In_<0.3>Ga_<0.7>As base layer at a collector current density of 10^3 A/cm^3 is approximately 0.9 V. The InGaAs HBT can be used also as a phototransistor covering the 1.2-1.5 μm wavelength region.
- 社団法人応用物理学会の論文
- 1993-11-15
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