Effect of "Mexican hat" on graphene bilayer field-effect transistor characteristics (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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RYZHII Victor
University of Aizu
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Otsuji Taiichi
RIEC, Tohoku University, Sendai 980-8577, Japan
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Svintsov Dmitry
Institute of Physics and Technology RAS, Moscow 117218, Russia
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Vyurkov Vladimir
Institute of Physics and Technology RAS, Moscow 117218, Russia
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