Analysis of Fringing Effect on Resonant Plasma Frequency in Plasma Wave Devices

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概要

• 論文の詳細を見る

• The effect of fringing electric field due to the nonideality of the gate two-dimensional electron gas (2DEG) channel capacitance on the fundamental resonant frequency of plasma waves in a high-electron-mobility transistor (HEMT) channel was investigated. The spatial distribution of sheet electron density in the fringed region of the 2DEG channel and the expression for the fundamental resonant frequency of plasma oscillation were obtained. A cascaded transmission line (TL) equivalent circuit model was developed to represent the gated and ungated fringed regions of the HEMT 2DEG channel. Results of calculation and IsSpice simulation show that fringing effects can be the cause of the fundamental plasma frequency reduction. Thus, the developed fringing effect model improves the deviation between theoretical and experimental data.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2009-04-25

著者

• Knap Wojtek

  Ges-umr5650 モンペリエ第2大学 Cnrs

• Suemitsu Tetsuya

  RIEC, Tohoku University, Sendai 980-8577, Japan

• Magome Nobuhiro

  RIEC, Tohoku University, Sendai 980-8577, Japan

• Otsuji Taiichi

  RIEC, Tohoku University, Sendai 980-8577, Japan

• Khmyrova Irina

  CNEL, University of Aizu, Aizuwakamatsu, Fukushima 965-8580, Japan

• Knap Wojtek

  GES-UMR5650, Universite Montpellier 2 and CNRS, Montpellier 34095, France

• Nishimura Takuya

  RIEC, Tohoku University, Sendai 980-8577, Japan

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• Effect of "Mexican hat" on graphene bilayer field-effect transistor characteristics (Selected topics in applied physics: Technology, physics, and modeling of graphene devices)
• Analysis of Fringing Effect on Resonant Plasma Frequency in Plasma Wave Devices

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