Ohmi Shun-ichiro | Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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概要
- Ohmi Shun-ichiroの詳細を見る
- 同名の論文著者
- Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japanの論文著者
関連著者
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ohmi Shun-ichiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Department of Advanced Applied Electronics, Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Department Of Applied Electronics Tokyo Institute Of Technology
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Liao Min
Department Of Electronics And Applied Physics Tokyo Institute Of Technology
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Liao Min
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
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Ishiwara Hiroshi
Department of Physics, Division of Quantum Phases and Devices, Konkuk University, Seoul 143-701, Korea
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Kamino Kousuke
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
著作論文
- Room-Temperature Fabrication of HfON Gate Insulator for Low-Voltage-Operating Pentacene-Based Organic Field-Effect Transistors
- Ultrathin Poly(4-vinylphenol) Interfacial Layer Evaporation for Low-Voltage Operation of Organic Field-Effect Transistors with HfO