Sano Takahiro | Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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概要
- Sano Takahiroの詳細を見る
- 同名の論文著者
- Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japanの論文著者
関連著者
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Sano Takahiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Ohmi Shun-ichiro
Department Of Applied Electronics Interdisciplinary Graduate School Of Science And Engineering Tokyo
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Ohmi Shun-ichiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan
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Sano Takahiro
Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan
著作論文
- In situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures
- HfOxNy Thin-Film Formation on Three-Dimensional Si Structure Utilizing Electron Cyclotron Resonance Sputtering