Sano Takahiro | Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan

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概要

• Sano Takahiroの詳細を見る
• 同名の論文著者
• Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japanの論文著者

関連著者

• Sano Takahiro

  Department of Electronics and Applied Physics, Tokyo Institute of Technology, Yokohama 226-8502, Japan

• Sano Takahiro

  Department of Electronics and Applied Physics, Tokyo Institute of Technology, J2-72, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Japan

著作論文

• In situ Formation of HfN/HfSiON Gate Stacks with 0.5 nm Equivalent Oxide Thickness Utilizing Electron Cyclotron Resonance Plasma Sputtering on Three-Dimensional Si Structures

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