Effect of the Beam Shape in Pseudoline Electron Beam Recrystallization

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概要

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• We investigated the shape of a spot beam which forms a pseudoline electron beam in the recrystallization of SOI (silicon-on-insulator) films. It was found that the recrystallization characteristics were strongly dependent on the shape of the spot beam. Under the optimized shape, 3×3 SOI patterns of 100 μm square were recrystallized in almost subboundary-free condition.

• 社団法人応用物理学会の論文
• 1990-10-20

著者

• Fukao Kazuichi

  Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology:(present Ad

• Ishiwara Hiroshi

  Research Laboratory Of Precision Machinery And Electronics Tokyo Institute Of Technology

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