Otani Seigen | The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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概要
- OTANI Seigenの詳細を見る
- 同名の論文著者
- The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limiの論文著者
関連著者
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Otani Seigen
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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Otani Seigen
Advanced Technology Division Fujitsu Ltd.
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Takai K
Kyoto Univ. Kyoto‐shi Jpn
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Yamada M
Ibaraki Univ. Ibaraki Jpn
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Yamada M
Process Development Division Fujitsu Ltd.
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Yamada M
Sony Corp. Tokyo Jpn
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NOSHIRO Hideyuki
Process Development Division, Fujitsu Ltd.
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Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
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Noshiro H
Process Development Division Fujitsu Ltd.
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TAMURA Tetsuro
Process Development Division, Fujitsu Ltd.
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TAKAI Kazuaki
Process Development Division, Fujitsu Ltd.
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KIMURA Mami
Process Development Division, Fujitsu Ltd.
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OTANI Seigen
Process Development Division, Fujitsu Ltd.
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YAMADA Masao
Process Development Division, Fujitsu Ltd.
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YOSHIKAWA Kohta
Advanced Technology Division, Fujitsu Ltd.
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KIMURA Takafumi
Advanced Technology Division, Fujitsu Ltd.
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NOSHIRO Hideyuki
Advanced Technology Division, Fujitsu Ltd.
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OTANI Seigen
Advanced Technology Division, Fujitsu Ltd.
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YAMADA Masao
Advanced Technology Division, Fujitsu Ltd.
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FURUMURA Yuji
Advanced Technology Division, Fujitsu Ltd.
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Furumura Yuji
Advanced Technology Division Fujitsu Ltd.
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Yoshikawa K
Advanced Technology Division Fujitsu Ltd.
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Yoshikawa Kohta
Advanced Technology Division Fujitsu Limited
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Kimura Mami
Process Development Division Fujitsu Ltd.
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Otani Seigen
Fujitsu Laboratories Ltd.
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Ashida Hiroshi
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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Takai Kazuaki
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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MATSUURA Katsuyoshi
The authors are with Advanced Material and FRAM Development Dept., ULSI Development Div., FUJITSU LI
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TAMURA Tetsuro
The authors are with Advanced Material and FRAM Development Dept., ULSI Development Div., FUJITSU LI
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Kimura M
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
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Yamada Masao
Advanced Technology Division Fujitsu Limited
著作論文
- Influence of Electrode Contacts on Leakage Current of SrTiO_3 Capacitors
- RuO_2 Thin Films as Bottom Electrodes for High Dielectric Constant Materials
- Effect of Zr/Ti Ratio on the Reliability Characteristics Behavior of Sol-Gel Derived PZT Films on Pt/IrO_2 Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)