MATSUURA Katsuyoshi | The authors are with Advanced Material and FRAM Development Dept., ULSI Development Div., FUJITSU LI

スポンサーリンク

概要

関連著者

Otani Seigen
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
Otani Seigen
Advanced Technology Division Fujitsu Ltd.
Takai K
Kyoto Univ. Kyoto‐shi Jpn
Tamura T
Silicon Technology Lab. Fujitsu Laboratories Ltd.
Ashida Hiroshi
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
Takai Kazuaki
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi
MATSUURA Katsuyoshi
The authors are with Advanced Material and FRAM Development Dept., ULSI Development Div., FUJITSU LI
TAMURA Tetsuro
The authors are with Advanced Material and FRAM Development Dept., ULSI Development Div., FUJITSU LI
Kimura M
The Authors Are With Advanced Material And Fram Development Dept. Ulsi Development Div. Fujitsu Limi

著作論文

Effect of Zr/Ti Ratio on the Reliability Characteristics Behavior of Sol-Gel Derived PZT Films on Pt/IrO_2 Electrode(Special Issue on Advanced Memory Devices Using High-ε and Ferroelectric Films)

スポンサーリンク