Characterization of Defects-Location in Hydrogenated Microcrystalline Silicon Thin Films and Its Influence on Solar Cell Performance
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概要
- 論文の詳細を見る
Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by hot-wire chemical vapor deposition (HW-CVD). Large grains containing nano-sized crystallites observed by scanning electron microscopy (SEM). The change in defect density in the absorbers of experimentally-prepared solar cells as a function of crystalline volume fraction was estimated from a comparison of simulated results using an AMPS-1D device simulator and previously reported solar cell performance. The modeled structure of grains in μc-Si:H thin films which was built based on the observed results was combined with the estimated defect density in the i-layer. The combination showed that the change in defect density in the i-layer of a solar cell could be explained well by employing the assumption that the defects exist at boundaries between the large grains, not between the nano-sized crystallites.
- 2008-08-25
著者
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Hiza Shuichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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