Improvement of Rear Surface Passivation Quality in p-Type Silicon Heterojunction Solar Cells Using Boron-Doped Microcrystalline Silicon Oxide
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概要
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Boron-doped microcrystalline silicon oxide (μc-SiO<sub>x</sub>:H) films for application as a back surface field (BSF) in p-type silicon heterojunction (SHJ) solar cells have been characterized. We found that the μc-SiO<sub>x</sub>:H(p) film at the optimized condition shows high conductivity and good passivation effect with a low surface recombination velocity of around $10^{2}$ cm/s. However, too much oxygen atoms in the films increase the defect and the passivation quality degrades. Thus, the control of oxygen content in the films is very important to obtain a high passivation quality. With applying the μc-SiO<sub>x</sub>:H(p) as a BSF layer leads to improved p-type SHJ solar cells performance, which shows the enchantment of EQE spectra in long wavelengths between 800 and 1200 nm. The highest efficiency of the p-type SHJ solar cell we obtain is 18.5% (active area = 0.88 cm2) with a $V_{\text{oc}} = 659$ mV, $J_{\text{sc}} = 34.7$ mA/cm2, and $\mathrm{FF}= 80.9$%.
- 2011-08-25
著者
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Watahiki Tatsuro
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Watahiki Tatsuro
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Rattanapan Suttirat
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Miyajima Shinsuke
Photovoltaics Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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