Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells
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概要
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We have studied the properties of boron-doped hydrogenated microcrystalline silicon oxide (p++ μc-SiO:H) with the aim of applying this film as the back surface field (BSF) in silicon solar cells. We found that the p++ μc-SiO:H film showed high conductivity and excellent passivation effect. A cast polycrystalline silicon solar cell using the p++ μc-SiO:H film as BSF showed an efficiency of 15.5% ($2 \times 2$ cm2). The high open circuit voltage and quantum efficiency at a wavelength of approximately 1000 nm clearly indicated the excellent BSF properties of the p++ μc-SiO:H film.
- 2008-12-25
著者
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Limmanee Amornrat
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Sugiura Tsutomu
Department O Chemistry Aichi University Of Education
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yamamoto Hiroshi
Departmemt Of Chemical Engineering University Of Tokyo
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Sato Takehiko
Material and Processing Technology Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1-57, Miyashimo, Sagamihara, Kanagawa 229-1195, Japan
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Sato Takehiko
Material and Processing Technology Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1-57 Miyashimo, Sagamihara, Kanagawa 229-1195, Japan
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Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sugiura Tsutomu
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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