Hydrogenated Amorphous Silicon Oxide Solar Cells Fabricated near the Phase Transition between Amorphous and Microcrystalline Structures

概要

論文の詳細を見る
We investigated the properties of hydrogenated amorphous silicon oxide (a-Si1-xOx:H) deposited near the phase transition between amorphous and microcrystalline structures. a-Si1-xOx:H films were prepared by plasma-enhanced chemical vapor deposition using a gas mixture of silane, hydrogen, and carbon dioxide. The film structure was changed from amorphous to microcrystalline phase by increasing hydrogen dilution. Optical and electrical characterizations revealed that wide-gap a-Si1-xOx:H films were deposited under phase transition conditions. We also fabricated a-Si1-xOx:H single-junction p–i–n solar cells by varying the hydrogen dilution for the i-layer. The solar cells showed a maximum open circuit voltage of 1.04 V ($J_{\text{sc}}=7.92$ mA/cm2, $\mathit{FF}=0.64$, $E_{\text{ff}}=5.2$%) when the i-layer was deposited under phase transition conditions.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2009-12-25