Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
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概要
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We propose hydrogenated amorphous silicon carbon nitride (a-SiCN:H) films prepared by hot-wire chemical vapor deposition (HWCVD) using hexamethyldisilazane (HMDS) as a new passivation layer of silicon solar cells. The films deposited at various deposition conditions were characterized focusing on optical properties and passivation quality. We found that the effective lifetime of the samples depended on the amount of Si–H bond and had strong correlation with the interface trap densities. After the optimization, the effective surface recombination velocity of n-type single crystalline silicon (c-Si) (1–10 $\Omega$ cm) with a-SiCN:H films has become lower than 60 cm/s and that of p-type was approximately 300 cm/s. The efficiency of a cast polycrystalline silicon solar cell using a-SiCN:H as a passivation layer reached 13.7% ($2\times 2$ cm2). Experimental results indicate that a-SiCN:H films are promising low-cost antireflection and passivation layers for silicon solar cells.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
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Otsubo Michio
Department Of Physical Electronics Tokyo Institute Of Technology
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Limmanee Amornrat
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Sato Takehiko
Material and Processing Technology Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1-57 Miyashimo, Sagamihara, Kanagawa 229-1195, Japan
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Limmanee Amornrat
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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