Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
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概要
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Highly conductive n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) films have been deposited by hot-wire chemical vapor deposition at low temperatures below 300 °C. We found that hexamethyldisilazane is an effective dopant for n-type doping into nc-3C-SiC:H films. Dark conductivity and its activation energy for the n-type nc-3C-SiC:H film were found to be 5.32 S/cm and 25 meV. We also fabricated nc-3C-SiC:H/crystalline silicon heterojunction diodes and solar cells. These devices showed good rectifying characteristics, and conversion efficiency of 13.4% was achieved.
- 2006-04-25
著者
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Haga Keisuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Haga Keisuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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