ZnO Films with Very High Haze Value for Use as Front Transparent Conductive Oxide Films in Thin-Film Silicon Solar Cells
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概要
- 論文の詳細を見る
We successfully increased the haze value of zinc oxide (ZnO) films fabricated using metal--organic chemical vapor deposition (MOCVD) by conducting glass-substrate etching before film deposition. It was found that with increasing the glass treatment time, the surface morphology of ZnO films changed from conventional pyramid-like single texture to greater cauliflower-like multi texture. Further, the rms roughness and the haze value of the films increased remarkably. Using ZnO films with a high haze value as front transparent conductive oxide (TCO) films in hydrogenated microcrystalline silicon (μc-Si:H) solar cells, we improved the quantum efficiency of these cells particularly in the long-wavelength region.
- Japan Society of Applied Physicsの論文
- 2010-05-25
著者
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MIYAJIMA Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology
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Konagai Makoto
Photovoltaics Research Center (pvrec) Tokyo Institute Of Technology
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YUNAZ Ihsanul
Department of Physical Electronics, Tokyo Institute of Technology
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Hongsingthong Aswin
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, To
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Krajangsang Taweewat
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro, To
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Yunaz Ihsanul
Department Of Physical Electronics Tokyo Institute Of Technology
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Hongsingthong Aswin
Department Of Physical Electronics Tokyo Institute Of Technology
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Krajangsang Taweewat
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Photovoltaic Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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