Development of Novel Al-Doped Zinc Oxide Films Fabricated on Etched Glass and Their Application to Solar Cells
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概要
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We have successfully developed novel aluminum-doped zinc oxide (AZO-X) films with a high haze ratio by the combined use of an etched glass substrate and wet-etched AZO-X films. The effects of the use of an etched glass substrate and wet-chemical etching on the properties of AZO-X films were investigated. The texture size and rms roughness of these films largely increased with glass surface roughening. Post-treatment using wet chemical etching slightly increased the texture size and rms roughness. The etched glass approach has been found to be a promising method for achieving an AZO-coated glass substrate with a high haze ratio. Using high-haze ratio AZO-X films as the front transparent conductive oxide (TCO) layers in solar cells, we improved the quantum efficiency (QE) of these solar cells particularly in the long-wavelength region. Thus, the AZO-X films deposited on etched glass have a high potential for use as front TCO layers in silicon-based thin-film solar cells.
- 2012-10-25
著者
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Sichanugrist Porponth
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Hongsingthong Aswin
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Aino Akehiro
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Kuramochi Hideto
TOSOH Corporation, Ayase, Kanagawa 252-1123, Japan
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Akiike Ryo
TOSOH Corporation, Ayase, Kanagawa 252-1123, Japan
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Iigusa Hitoshi
TOSOH Corporation, Ayase, Kanagawa 252-1123, Japan
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Utsumi Kentaro
TOSOH Corporation, Ayase, Kanagawa 252-1123, Japan
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Shibutami Tetsuo
TOSOH Corporation, Ayase, Kanagawa 252-1123, Japan
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Sichanugrist Porponth
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Hongsingthong Aswin
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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