High-Rate Preparation of Amorphous-Silicon Solar Cells with Monosilane
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概要
- 論文の詳細を見る
Hydrogenated amorphous silicon (a-Si:H) films produced from monosilane (SiH_4) at high deposition rates of 10-30 Å/s were studied. The p-i-n solar cells using these films as i-layers were fabricated with emphasis on the effect of light boron-doping during the i-layer deposition and the buffer i-layer at the p/i interface prepared at a lower deposition rate to minimize the interfacial damage from high-energy charged particles. By optimizing this buffer i-layer, a conversion efficiency of 9.1 % under AM 1 (100 / mW / cm^2) illumination was obtained at a deposition rate of 10 Å/s. This high efficiency shows that the buffer i-layer at the p/i interface, prepared at a low deposition rate, is significant for the high-rate preparation of high-performance a-Si:H solar cells.
- 社団法人応用物理学会の論文
- 1986-03-20
著者
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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SICHANUGRIST Porponth
Department of Physical Electronics, Tokyo Institute of Technology
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Sichanugrist Porponth
Department Of Physical Electronics Tokyo Institute Of Technology
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Suzuki Hirohisa
Department Of Mechanical Engineering Saitama University
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Suzuki Hirohisa
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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