Amorphous-Silicon Solar Cells Prepared by a Combined Photoehemical-Plasma CVD Technique
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概要
- 論文の詳細を見る
A new technique for the fabrication of pin amorphous-silicon solar cells in which the p-layer can be deposited byphoto-CVD whereas the i- and n-layers are deposited by conventional plasma CVD has been developed. Wide-bandgap, highly-conductive p-type a-SiC:H layers were obtained by direct photochemical vapor deposition from a mixture of disilane and methylsilane or acetylene. On these layers, i- and n-layers consisting of respectively of slightly-boron-doped, and phosphorus-doped amorphous silicon were successively deposited by glow-discharge decomposition in silane to form the pin structure. A considerable improvement of the carrier collection efficiency, especially in the short wavelength region, was observed in cells prepared by the new fabrication method, and a conversion efficiency of 9.46% was obtained.
- 社団法人応用物理学会の論文
- 1985-08-20
著者
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山田 晃
東京農工大学生物システム応用科学府
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Yamada Akira
Department Of Cardiology Aso-iizuka Hospital
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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Kenne Jean
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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