Epitaxial Growth of Ge Layers on Si Substrates by Vacuum Evaporation
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1968-08-05
著者
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Ito Kentaro
Department Of Psychiatry Tokyo Medical University
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TAKAHASHI Kiyoshi
Department of Medicine, National Minami-Okayama Hospital
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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Ito Kentaro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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Ito Kentaro
Department Of Electronics Faculty Of Engineering Tokyo Institute Of Technology:(present Address) Dep
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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