A Ferroelectric Field Effect Device Using Thin Film SnO_2 and Gate Insulator BaTiO_3
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1975-07-05
著者
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Ito Kentaro
Department Of Psychiatry Tokyo Medical University
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Ito Kentaro
Department Of Electronics Faculty Of Engineering Shinshu University
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Ito Kentaro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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TSUCHIYA Hidetoshi
Department of Electronics, Faculty of Engineering, Shinshu University
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Tsuchiya Hidetoshi
Department Of Electronics Faculty Of Engineering Shinshu University
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Tsuchiya Hidetoshi
Department Of Applied Chemistry Faculty Of Science And Engineering Ritsumeikan University
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