Dependence of Resistivity on Donor Dopant Content in Barium Titanate Ceramics
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1979-04-05
著者
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Fukami Tatsuo
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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Fukami Tatsuo
Department Of Electronic Engineering Faculty Of Engineering Shinshu University
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TSUCHIYA Hidetoshi
Department of Electronics, Faculty of Engineering, Shinshu University
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Tsuchiya Hidetoshi
Department Of Electronic Engineering Faculty Of Engineering Shinshu University
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Tsuchiya Hidetoshi
Department Of Applied Chemistry Faculty Of Science And Engineering Ritsumeikan University
関連論文
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- A Ferroelectric Field Effect Device Using Thin Film SnO_2 and Gate Insulator BaTiO_3
- Dependence of Resistivity on Donor Dopant Content in Barium Titanate Ceramics
- Anomolous Dielectric Relaxation in Nickel-Doped Barium-Strontium Titanate Ceramics
- Highly C-Axis-Oriented Pb(Zr, Ti)O_3 Films Prepared by Sputtering : Thin Films
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- Target Erosion Pattern in Planar Magnetron Sputtering
- TSC Study on Fe-Doped Barium-Strontium Titanate Ceramics : F: Ferroelectric Materials
- Shift of the Lattice Constant of PZT Films through the Post-Deposition Heat Treatment
- Effects of Sputtering Atmosphere Oxygen Pressure on Photocatalytic Phenomena in Anatase Films : Surfaces, Interfaces, and Films
- Ferroelectric Films Deposited by Reactive Sputtering and Their Properties : T: THIN FILM
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- Effect of Zr/Ti Ratio on Crystal Structure of Thin Lead Zirconate-Titanate Films Prepared by Reactive Sputtering
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