CuAlS2 Thin-Films Prepared by Sulfurization of Metallic Precursors and their Properties
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概要
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CuAlS2 thin-films with the (112) preferred orientation have been prepared for the first time by sulfurization of metallic precursors in a vacuum-sealed quartz ampule at temperatures ranging from 530°C to 850°C. The film had resistivity as low as 62 $\Omega$$\cdot$cm, and exhibited $p$-type conduction. The structure of the film was characterized by X-ray diffraction, scanning electron microscopy and electron probe micro-analysis. The bandgap estimated by an optical transmission measurement was 3.50 eV, in fair agreement with that of the single crystal.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-10-15
著者
-
Bhandari Ramesh
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
-
Ito Kentaro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
-
Hashimoto Yoshio
Department Of Anesthesiology University Of Hirosaki School Of Medicine
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