Electrical Properties of 1-μm-Thick Continuous $\beta$-FeSi2 Films on Abraded Si-Substrates Grown by RF-Magnetron Sputtering
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概要
- 論文の詳細を見る
Crystallinity, electrical properties, and adhesion to substrates were investigated using 1.4-μm-thick $\beta$-FeSi2 continuous films prepared on abraded Si substrates. When the substrates were abraded, the films did not peel off even when they were cooled rapidly after annealing. Moreover, Fe–Si sputtered films could be grown up to $\beta$-FeSi2 by only one-hour annealing. The conduction type of $\beta$-FeSi2 films prepared from a precursor with $\text{Si/Fe}=1.7$ was of the p-type, with a carrier density of $10^{15}$–$10^{16}$ cm-3 and a mobility of 80–350 cm2/V$\cdot$s at room temperature, which are desirable values for solar cell applications.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-10-15
著者
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Ito Kentaro
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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Momose Noritaka
Department Of Electrical And Electronic Engineering Faculty Of Engineering Shinshu University
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Takahashi Masashi
Department Of Animal And Grassland Research National Agricultural Center For Kyushu Okinawa Region
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Hashimoto Yoshio
Department Of Anesthesiology University Of Hirosaki School Of Medicine
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Momose Noritaka
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano-shi, Nagano 380-8553, Japan
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Hashimoto Yoshio
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano-shi, Nagano 380-8553, Japan
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Ito Kentaro
Department of Electrical and Electronic Engineering, Faculty of Engineering, Shinshu University, 4-17-1 Wakasato, Nagano-shi, Nagano 380-8553, Japan
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