Growth of III-VI Compound Semiconductors by Metalorganic Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
Growth of III-VI compound semiconductors (Ga_2S_3, Ga_2Se_3 and Ga_2Te_3) has been tried for the first time by metalorganic molecular beam epitaxy (MOMBE). The growth rate decreases with increasing substrate temperature, and single crystal Ga_2Te_3 films were obtained on (100) InP substrates. In Ga_2Te_3 growth, the lattice mismatch between Ga_2Te_3 and the substrate is critical in obtaining good epitaxial films.
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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Takahashi K
Tokyo Inst. Technol. Yokohama Jpn
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Takahashi Kouchiro
National Institute For Research In Inorganic Materials
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Teraguchi N
Sharp Corp. Nara Jpn
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TERAGUCHI Nobuaki
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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KATO Fuji
Department of Electrical and Electronic Engineering, Tokyo Institute of Technology
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Kato Fuji
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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