Metalorganic Molecular Beam Epitaxial Growth of ZnSe Using Diethylzinc and Diethylselenide
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概要
- 論文の詳細を見る
ZnSe epitaxial layers have been grown for the first time on (100) GaAs substrates by metalorganic molecular beam epitaxy using diethylzinc and diethylselenide. Diethylselenide is cracked by the cracking furnace. Smooth single-crystalline layers can be grown at substrate temperatures above 200℃. Photoluminescence spectra vary noticeably with the substrate temperature. Above 400℃, the spectra measured at 71 K were dominated by intense blue donor-acceptor pair bands, and broad luminescence bands at longer wavelengths were weak.
- 社団法人応用物理学会の論文
- 1986-04-20
著者
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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Ando Hideyasu
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Taike Akira
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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KIMURA Ryuuhei
Department of Physical Electronics, Tokyo Institute of Technology
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Kimura Ryuuhei
Department Of Physical Electronics Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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