Piezoresistive Effect of Hydrogenated Microcrystalline Silicon Prepared by Plasma- and Photo-Chemical Vapor Deposition
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概要
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The piezoresistive effect of hydrogenated microcrystalline silicon (μc-Si: H) prepared by plasma- and photo-chemical vapor deposition (CVD) was measured, and the stability of μc-Si: H on the gauge factor was studied. The gauge factors of doped μc-Si: H prepared by plasma-CVD were found to be -25〜 -40 and 16〜23 for n- and p-type, respectively. As the rf power during the preparation was increased, the measured gauge factor increased for both n- and p-type. The photolysis process was also used to deposit highly conductive μc-Si: H films, and the gauge factor of the films was improved to -61 for n-type and 43 for 7t-type. A degradation of the gauge factor was observed when the films prepared by both processes were annealed, but the resulting gauge factor for the photo-CVD films was still larger after 8 hours' annealing.
- 社団法人応用物理学会の論文
- 1986-01-20
著者
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Konagai Makoto
Department Of Physical Electronics Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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NISHIDA Shoji
Department of Physical Electronics, Tokyo Institute of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Nishida Shoji
Department Of Physical Electronics Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Physical Electronics Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Applied Physics Faculty Of Engineering University Of Tokyo
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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