Self-Limitting Growth in Atomic Layer Epitaxy of ZnTe
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概要
- 論文の詳細を見る
ZnTe films were grown on GaAs substrates by atomic layer epitaxy using the molecular beam epitaxy technique. We investigated the growth rate per cycle as a function of beam intensities of Zn and Te at the substrate temperature of 250℃ and obtained the self-limiting growth of 0.5 monolayer per cycle, independent of Zn or Te beam intensity in the selected ranges.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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Takahashi Kiyoshi
Department Of Internal Medicine Ii Okayama University Graduate School Of Medicine And Dentistry
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TAKEMURA Yasushi
Department of Electrical and Computer Engineering, Yokohama National University
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Konagai Makoto
Department Of Electrical And Engineering Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Takemura Yasushi
Department Of Electrical And Engineering Tokyo Institute Of Technology
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Nakanishi Hideki
Department Of Electrical And Engineering Tokyo Institute Of Technology
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Nakanishi Hideki
Department Of Dermatology School Of Medicine The University Of Tokushima
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Takahashi Kiyoshi
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Electrical And Engineering Tokyo Institute Of Technology
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Takahashi Kiyoshi
Department Of Agronomy Faculty Of Agriculture Tohoku University
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TAKEMURA YASUSHI
Department of Chemical Engineering, Shizuoka University
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