Improving Mobility of F-Doped SnO Thin Films by Introducing Temperature Gradient during Low-Pressure Chemical Vapor Deposition
スポンサーリンク
概要
著者
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Ikeda Toru
Research Group Of Regional Sciences Graduate School Of Letters Hokkaido University
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Shidoji Eiji
Research Center Asahi Glass Co. Ltd.
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Sichanugrist Porponth
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Odaka Hidefumi
Research Center, Asahi Glass Co., Ltd., Yokohama 221-8755, Japan
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Isshiki Masanobu
Research Center, Asahi Glass Co., Ltd., Yokohama 221-8755, Japan
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Okubo Junichi
Research Center, Asahi Glass Co., Ltd., Yokohama 221-8755, Japan
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Oyama Takuji
Research Center, Asahi Glass Co., Ltd., Yokohama 221-8755, Japan
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