Development of Boron-Doped ZnO Films with Novel Thin Zn-Rich Film and Their Application to Solar Cells
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概要
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In this paper, we report newly developed high-haze glass/zinc oxide (ZnO) substrates with low resistivity by a combination of unique etched soda-lime glass and bilayered ZnO films with a Zn-rich (oxygen-poor) layer. The high mobility and low resistivity of bilayered ZnO films could be obtained with Zn-rich conditions. By depositing the ZnO films onto textured glass substrates, the obtained films exhibit an excellent light-scattering property, while their electrical property is still good. Furthermore, the bilayered ZnO films with a Zn-rich layer did not negatively affect the transparency of the films. Employing the bilayered ZnO films with a Zn-rich layer and an rms roughness of about 274 nm as the front transparent conductive oxide (TCO) in hydrogenated amorphous silicon (a-Si:H) solar cells, we improved the performance and quantum efficiency (QE) of the fabricated solar cells, particularly in the short-wavelength region without the deterioration of open-circuit voltage or fill factor. Thus, the developed glass/bilayered ZnO film with a Zn-rich layer is a new promising material since its resistivity is low while its light-scattering property is still high.
- 2012-10-25
著者
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Sichanugrist Porponth
Department Of Physical Electronics Tokyo Institute Of Technology
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Hongsingthong Aswin
Department Of Physical Electronics Tokyo Institute Of Technology
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Wada Hidetoshi
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Konagai Makoto
Photovoltaic Research Center (PVREC), Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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Moriya Yuki
Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
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