Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
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概要
- 論文の詳細を見る
Stoichiometric hydrogenated microcrystalline cubic silicon carbide ($\mu$c-3C-SiC:H) films were successfully deposited by hot wire chemical vapor deposition (HWCVD) at a substrate temperature of 280°C using monomethylsilane and hydrogen. The ratio of hydrogen to monomethylsilane (hydrogen dilution ratio) strongly affected the structural and electrical properties of $\mu$c-3C-SiC:H films. Subgap absorption measurements on the films revealed that the defect density of the films was influenced by hydrogen dilution ratio. This result indicates that hydrogen dilution ratio is one of the key parameters for obtaining $\mu$c-3C-SiC:H with low defect density.
- Japan Society of Applied Physicsの論文
- 2004-09-15
著者
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Miyajima Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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