Preparation of Microcrystalline Germanium Carbon Thin Films by Hot-Wire Chemical Vapor Deposition Using Dimethylgermane
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概要
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Microcrystalline germanium carbon (μc-Ge1-xCx) thin films were deposited by hot-wire chemical vapor deposition using dimethylgermane. We investigated the influence of the hydrogen dilution ratio on the deposition rate and film structure. The deposition rate and crystal orientation of the films were strongly affected by the hydrogen dilution ratio. The conductivity of the films was changed with the structure of the films from amorphous to crystalline. The conductivity of the amorphous film was $3.04\times 10^{-5}$ S/cm and that of the microcrystalline films was up to 0.1 S/cm. The carbon concentrations of the films were about 2 at. %, as estimated by X-ray photoelectron spectroscopy. The energy at which the absorption coefficient becomes $10^{4}$ cm-1 for the μc-Ge0.98C0.02 film is 1.30 eV, which is 0.25 eV higher than that of c-Ge.
- 2007-05-15
著者
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yashiki Yasutoshi
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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