Yamada Akira | Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
スポンサーリンク
概要
関連著者
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Miyajima Shinsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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YAMADA Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
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KONAGAI Makoto
Department of Physical Electronics, Tokyo Institute of Technology
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Limmanee Amornrat
Department Of Physical Electronics Tokyo Institute Of Technology
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Kurokawa Yasuyoshi
Department Of Physical Electronics Tokyo Institute Of Technology
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Hiza Shuichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Yunaz Ihsanul
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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山田 晃
農工大院
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山田 晃
東京農工大学生物システム応用科学府
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KONAGAI Makoto
Tokyo Institute of Technology
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Yamada Akira
Frontier Research Program The Institute Of Physical And Chemical Research (riken)
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Yamada Akira
Biological Ict Group National Institute Of Information And Communications Technology
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山田 晃
東京農工大学生物システム応用科学研究科
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山田 晃
東京農工大学大学院生物システム応用科学研究科
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Konagai M
Department Of Physical Electronics Tokyo Institute Of Technology
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MIYAJIMA Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology
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KUROKAWA Yasuyoshi
Department of Physical Electronics, Tokyo Institute of Technology
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Haga Keisuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Otsubo Michio
Department Of Physical Electronics Tokyo Institute Of Technology
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山田 晃
東京農工大学大学院生物システム応用科学教育部
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Miyajima Shinsuke
Tokyo Inst. Technol. Tokyo Jpn
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Banerjee Chandan
Department Of Physical Electronics Tokyo Institute Of Technology
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Sritharathikhun Jaran
Department Of Physical Electronics Tokyo Institute Of Technology
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Sugiura Tsutomu
Department O Chemistry Aichi University Of Education
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Chiba Yoshiyuki
Department Of Dermatology Yokohama City University School Of Medicine
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Yamamoto Hiroshi
Departmemt Of Chemical Engineering University Of Tokyo
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Sriprapha Kobsak
Department Of Physical Electronics Tokyo Institute Of Technology
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Sato Takehiko
Material and Processing Technology Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1-57 Miyashimo, Sagamihara, Kanagawa 229-1195, Japan
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Sawamura Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Maruyama Seitaro
First Department Of Internal Medicine Niigata University School Of Medicine
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Konagai Makoto
Department Of Physical Electronics Tokyo Institute Of Technology
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Minagawa Shiroh
Division Of Cardiology Niigata University Graduate School Of Medical And Dental Sciences
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Konagai Makoto
Department Of Electrical And Electronic Engineering. Tokyo Institute Of Technology
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Sawamura Makoto
Department Of Physics Hiroshima University
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Miyajima Seiichi
Division Of Internal Medicine Niigata Minami Hospital
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KAMBE Mika
Department of Physical Electronics, Tokyo Institute of Technology
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SATO Kazuo
Research Center, Asahi Glass Co., Ltd.
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KOBAYASHI Daisuke
Research Center, Asahi Glass Co., Ltd.
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FUKAWA Makoto
Research Center, Asahi Glass Co., Ltd.
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TANEDA Naoki
Research Center, Asahi Glass Co., Ltd.
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Kambe Mika
Department Of Physical Electronics Tokyo Institute Of Technology
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Myong Seung
Department Of Electrical Engineering Korea Advanced Institute Of Science And Technology
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Taneda Naoki
Research Center Asahi Glass Co. Ltd.
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Fukawa Makoto
Research Center Asahi Glass Co. Ltd.
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Tomita Shigeki
Department Of Surgical And Molecular Pathology Dokkyo University School Of Medicine
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Narayanan Kannan
Department Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Ishihara Hanae
Department Of Physical Electronics Tokyo Institute Of Technology
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HIZA Shuichi
Department of Physical Electronics, Tokyo Institute of Technology
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YUNAZ Ihsanul
Department of Physical Electronics, Tokyo Institute of Technology
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SRIPRAPHA Kobsak
Department of Physical Electronics, Tokyo Institute of Technology
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Murano Masahiko
Department Of Physical Electronics Tokyo Institute Of Technology
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Miyajima S
Division Of Internal Medicine Niigata Minami Hospital
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Matsuda Wataru
Department Of Physical Electronics Tokyo Institute Of Technology
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Yunaz Ihsanul
Tokyo Inst. Technol. Tokyo Jpn
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Wada Takahiro
Department Of Intelligent Mechanical Systems Faculty Of Engineering Kagawa University
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Matsuo Yoshihiro
Department Of Materials Chemistry Ryukoku University
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Sato Kazuo
Research Center Asahi Glass Co. Ltd.
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Sato Takehiko
Photovoltaic and Power Storage Group Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, Sagamihara, Kanagawa 229-1195, Japan
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Sato Takehiko
Material and Processing Technology Department, Advanced Technology R&D Center, Mitsubishi Electric Corporation, 1-1-57, Miyashimo, Sagamihara, Kanagawa 229-1195, Japan
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Narayanan Kannan
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Kurokawa Yasuyoshi
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Konagai Makoto
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Meng Fanying
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Miyajima Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Miyajima Shinsuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yashiki Yasutoshi
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sugiura Tsutomu
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Limmanee Amornrat
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yunaz Ihsanul
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yunaz Ihsanul
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Murano Masahiko
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ishihara Hanae
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Chiba Yoshiyuki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Banerjee Chandan
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Matsuda Wataru
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Myong Seung
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Haga Keisuke
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9, O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Sawamura Makoto
Department of Life Science, Kyoto University
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Tomita Shigeki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Wada Takahiro
Department of Chemistry, Tokyo Metropolitan University
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Sritharathikhun Jaran
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
著作論文
- Photoluminescence properties of Cu(InGa)Se2 thin films prepared by mechanochemical process (Special issue: Nano electronic materials)
- Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
- TiO_2-Coated Transparent Conductive Oxide (SnO_2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
- Effects of Temperature and Spectral Irradiance on Performance of Silicon-Based Thin Film Multijunction Solar Cells
- Boron-doped Microcrystalline Silicon Oxide Film for Use as Back Surface Field in Cast Polycrystalline Silicon Solar Cells
- Growth of Polycrystalline Zn1-XMgXO Thin Films Using EtCp2Mg and MeCp2Mg by Metal Organic Chemical Vapor Deposition
- Characterization of Defects-Location in Hydrogenated Microcrystalline Silicon Thin Films and Its Influence on Solar Cell Performance
- Effect of the Structural Change of Hydrogenated Microcrystalline Silicon Thin Films Prepared by Hot-Wire Chemical Vapor Deposition
- Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
- Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
- Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
- Temperature Dependence of Si-Based Thin-Film Solar Cells Fabricated on Amorphous to Microcrystalline Silicon Transition Phase
- Growth of Strain-Relaxed Si1-yCy Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
- Preparation of Microcrystalline Germanium Carbon Thin Films by Hot-Wire Chemical Vapor Deposition Using Dimethylgermane
- Photoluminescence from Silicon Quantum Dots in Si Quantum Dots/Amorphous SiC Superlattice
- Surface Passivation of Crystalline and Polycrystalline Silicon Using Hydrogenated Amorphous Silicon Oxide Film
- Effect of Plasma Power on Structure of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition at a Low Substrate Temperature
- Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature
- Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
- Theoretical Analysis of Amorphous Silicon Alloy Based Triple Junction Solar Cells
- Effects of Hydrogen Dilution Ratio on Properties of Hydrogenated Nanocrystalline Cubic Silicon Carbide Films Deposited by Very High-Frequency Plasma-Enhanced Chemical Vapor Deposition