Growth of Strain-Relaxed Si1-yCy Films with Compositionally Graded Buffer Layers by Gas Source Molecular Beam Epitaxy
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概要
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We have grown step-graded Si1-yCy structures as buffer layers for a strain-relaxed Si1-yCy layer and investigated the strain relaxation of the structures. Si and Si1-yCy films were deposited by gas-source molecular beam epitaxy using Si2H6 and SiH3CH3 gases. The substitutional carbon contents and lattice parameters of Si1-yCy were evaluated by high-resolution X-ray diffractometry. X-ray reciprocal lattice space mappings showed that the relaxation ratio of each layer increased from the bottom layer to the top layer in the step-graded Si1-yCy structures. Using the step-graded Si1-yCy structures, we have successfully achieved higher relaxation ratios compared with using a single Si1-yCy structure, which has a constant carbon composition. When the total film thickness was 1000 nm, a single Si99.0C1.0 structure showed a relaxation ratio of 15%, while the top Si98.9C1.1 layer of the step-graded Si1-yCy structures showed a relaxation ratio of 60%. From these results, it is concluded that step-graded Si1-yCy structures are important in realizing strained Si/strain-relaxed Si1-yCy structures that are applicable to vertical MOSFETs.
- 2007-04-15
著者
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Ishihara Hanae
Department Of Physical Electronics Tokyo Institute Of Technology
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Murano Masahiko
Department Of Physical Electronics Tokyo Institute Of Technology
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Konagai Makoto
Department Of Electrical & Electronic Engineering Tokyo Institute Of Technology
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Yamada Akira
Quantum Nanoelectronics Research Center Tokyo Institute Of Technology
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Murano Masahiko
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Ishihara Hanae
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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Yamada Akira
Quantum Nanoelectorics Research Center, Tokyo Institute of Technology, 2-12-1-S9-9 O-okayama, Meguro-ku, Tokyo 152-8552, Japan
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